Verfahren zum Herstellen von Halbleiterkontakten.,申请号DE19883850624T-传众专利搜索

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发明名称	Verfahren zum Herstellen von Halbleiterkontakten.
摘要
申请公布号	DE3850624(T2)	申请公布日期	1994.12.22
申请号	DE19883850624T	申请日期	1988.08.23
申请人	THORN EMI NORTH AMERICA INC., COLORADO SPRINGS, COL., US	发明人	STEVENS, E. HENRY, COLORADO SPRINGS COLORADO 80906, US;MCCLURE, PAUL JOHN, COLORADO SPRINGS COLORADO 80906, US;HILL, CHRISTOPHER WARREN, COLORADO SPRINGS COLORADO 80906, US
分类号	H01L29/78;H01L21/28;H01L21/285;H01L21/336;(IPC1-7):H01L21/285;H01L21/60	主分类号	H01L29/78
代理机构		代理人
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