Selective dry etching method for compound semiconductor and production method of semiconductor device

摘要

A selective ECR dry etching method for etching compound semiconductors includes dry etching an In-containing compound semiconductor material in an ECR plasma of a Cl2/He mixture with a Cl2/(He+Cl2) ratio from 0.05 to 0.2 and a gas pressure below 4.0x10-4 Torr. A selective ECR dry etching method includes dry etching a compound semiconductor material including no Al selectively with respect to a compound semiconductor material including Al using a plasma in an Cl2/He/O2 mixture with a ratio of Cl2/(He+Cl2) ratio within 0.05 to 0.2 and O2 less than 30% of the Cl2 gas at a gas pressure below 5.0x10-4 Torr.