Strahlungsempfindliche Halbleiteranordnung.

摘要

A radiation-sensitive semiconductor device comprising a high-ohmic semiconductor wafer having a thicker edge portion (1A) and a thinner central portion (1B), in which a photodiode (5) is located. The surface opposite to the photodiode is provided with a highly doped contact layer (7), on which a metal layer (8) is provided. The central portion is so thin that at a low photodiode voltage the depletion zone of the photodiode extends as far as the contact layer (7). According to the invention, the device comprises an active screening diode (11), which extends both in the edge portion and in the central portion and whose depletion zone extends in the operating condition in the central portion also as far as the contact layer (7). As a result, diffusion of charge carriers from the edge portion to the photodiode is avoided.