发明名称 |
COMPOUND WITH ROOM TEMPERATURE ELECTRICAL RESISTIVITY COMPARABLE TO THAT OF ELEMENTAL COPPER |
摘要 |
A NEW COMPOUND WITH ROOM-TEMPERATURE ELECTRICAL RESISTIVITY COMPARABLE TO THAT OF ELEMENTAL COPPER The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu3Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove. |
申请公布号 |
CA2112447(A1) |
申请公布日期 |
1994.08.24 |
申请号 |
CA19932112447 |
申请日期 |
1993.12.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABOELFOTOH, MOHAMED O.;BRADY, M. JOHN;KRUSIN-ELBAUM, LIS |
分类号 |
C22C1/00;C22C9/00;C23C14/06;(IPC1-7):C30B25/02;H01L21/285;C30B29/40;H01L23/532 |
主分类号 |
C22C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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