METHOD OF CLEANING CVD REACTOR FOR MANUFACTURE OF POLYCRYSTALLINE SILICON

摘要

PURPOSE: To clean the inner surface of a chemical vapor deposition reactor that is used to manufacture silicon with a semiconductor grade by allowing carbon dioxide pellet to hit against a silicon deposit on the inner surface of the reactor that is used to form polycrystalline silicon by chemical vapor deposition. CONSTITUTION: A reactor 9 for cleaning is used to form polycrystalline silicon by chemically depositing a supply gas that is selected from a group consisting of silane and halosilane. Carbon dioxide gas is sent from a cylinder 1 to a pelletizer 2, where carbon dioxide gas is compressed and is formed into a solid dioxide carbon pellet. A solid carbon dioxide particle created by the pelletizer 2 is preferably in cylindrical form with 0.16-0.95 cm dimension. The carbon dioxide pellet hits against the inner surface of the reactor 9 and is discharged from a nozzle 4 toward the inner surface of the reactor 9 to eliminate adhered silicon, thus preventing the level of the contamination substance on the wall of the reactor from increasing.