发明名称 Liquid-phase epitaxy growth system and method for growing epitaxial layer
摘要 The liquid-phase epitaxy system having the LPE boat consists of of a slider section, a source holder section, and a contacting well section, in which the distance between the first two contacting wells is different from that between the first two source holding wells, so that the concentration of the solutions can be controlled by the proper temperature profile, since the solution for melt-etch and the remaining solution for the epitaxial growth are not filled into the contacting wells at the same time. Thus, the present invention can easily perform the in-situ melt-etch and can improve the quality of the epitaxial layer and the epitaxial yield by minimizing the contamination of the melt-etched surface of the substrate.
申请公布号 US5334278(A) 申请公布日期 1994.08.02
申请号 US19910752856 申请日期 1991.08.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SONG J.
分类号 C30B19/00;C30B19/06;H01L21/208;(IPC1-7):C30B19/06 主分类号 C30B19/00
代理机构 代理人
主权项
地址