| 摘要 |
PURPOSE:To perform the fine processing of a FET part with high precision, by a method wherein a P-I-N photo diode is produced by growing alternately GaxAl1-xAs layers and GaAs layers on a semi-insulative GaAs substrate. CONSTITUTION:A P-I-N photo diode is formed an N<+>-Ga0.7Al0.3As layer 2, an N<+>-GaAs layer 3, an I-type Ga0.7Al0.3As layer 4, an I-type GaAs layer 5, an I-type Ga0.7Al0.3As layer 6 and an I-type GaAs layer 7 by liquid phase epitaxial growth in an etched groove in the order listed. A P-type region 13 is formed by diffusing an impurity in the layer 6 and, at the same time, is used as an electrical connection part to a gate part 9 of a FET of a pre-ampli fier. Whereupon, the roughness of the substrate is inhibited to the minimum necessary and a photo resist can be applied thinly. Thereby, the fine processing of the FET is performed with high precision. |
