| 摘要 |
<p>PURPOSE:To obtain a magnetoresistance effect material of single structure having a large magnetoresistance changing rate at room temp. by a method wherein the material is composed of a ferromagnetic metal atoms and a non-magnetic metal atoms which is in a non-solid--solubility relation, in which they atomically do not mix both in solid phase and liquid phase, with the ferromagnetic metal atoms. CONSTITUTION:The magnetoresistance effective material is composed of ferromagnetic metal atoms such as Fe atoms, for example, non-magnetic atoms, which are in the relation of non-solid solution with the above-mentioned metal atoms, such as Ag atoms for example, and the desirable atomic weight ratio of the Ag atoms in the FeAg alloy is 60 to 85 atomic %. To be more precise, a single layer magnetic thin film 2, consisting of an FeAg alloy, is formed on the upper surface of a glass substrate 1 by vacuum deposition, and a magnetoresistance effect material is formed. The above- mentioned vacuum deposition is conducted by fusing Fe by the irradiation of an electron beam, and Ag is fused by resistance heating. The atomic weight compositional ratio of the magnetic thin film 2 is controlled based on the ratio of the vapor deposition speed of Fe and Ag. The magneresistance changing rate of the above-mentioned magnetoresistance effect magerial is 10% or higher, a also it can be manufactured easily.</p> |
