发明名称 Semiconductor device with current-sensing function.
摘要 <p>This disclosure relates to an overcurrent protection means in a semiconductor device consisting of a semiconductor element (1, 6) with a current-sensing function and its control circuit (2), wherein the semiconductor element (1) has two current-sensing electrodes (1b, 1d) to output sensing currents (1e, 1f) that are proportional to the main current (6f), the sensing currents (1e, 1f) output from the sensing electrodes (1b, 1d) flow into separate current-sensing resistors (72, 72a), where the current detection voltages (V6, V6a), which are proportional to the sensing currents (1e, 1f), consequently proportional to the main current (6f), are generated in each resistor (72, 72a), and by structuring the circuitry so that the detection voltages (V6, V6a) are independently applied to the main current turn-off command circuit (74) and the main current control circuit (75) in the control circuit (2), an overcurrent detection level (I oc) of the main current and a short-circuit current detection level (I sct) can be set independently of each other. <IMAGE></p>
申请公布号 EP0599605(A2) 申请公布日期 1994.06.01
申请号 EP19930309339 申请日期 1993.11.23
申请人 FUJI ELECTRIC CO. LTD. 发明人 HOUSEN, TORU;WATANABE, MANABU
分类号 H03K17/08;H03K17/082;H03K17/12;H03K17/56;(IPC1-7):H03K17/08 主分类号 H03K17/08
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