Process for preferentially etching polycrystalline silicon.,申请号EP19880117495-传众专利搜索

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发明名称	Process for preferentially etching polycrystalline silicon.
摘要
申请公布号	EP0314990(B1)	申请公布日期	1994.06.01
申请号	EP19880117495	申请日期	1988.10.20
申请人	MOTOROLA, INC.	发明人	DOCKREY, JASPER WILLIAM
分类号	H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/31;H01L21/28	主分类号	H01L21/302
代理机构		代理人
主权项
地址

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