| 摘要 |
PURPOSE:To prevent characteristics deterioration such as short-channel effect, etc., of an element caused by the heat treatment during anti-fuse film formation. CONSTITUTION:After a thin insulating film 7 is formed in a specified area, an upper electrode 3 is formed thereon, an impurity is injected on a substrate through the film 7, and then the injected impurity is diffused to form a lower electrode 8 as an impurity diffusion layer under the electrode 3. |
