MANUFACTURE OF SEMICONDUCTOR MEMORY

摘要

PURPOSE:To increase the effective surface area of the storage node of a capacitor used in a DRAM cell. CONSTITUTION:A recessing and projecting surface 7 is formed on the surface of a polycrystalline silicon thin film 3 which becomes the lower electrode 3 of a capacitor by performing reactive etching 6 having a selection ratio of >=3 against phosphate glass 5 on the thin film 3 by utilizing the glass 5 formed on the surface of the thin film 3 with an uneven film thickness as a kind of etching mask at the time of introducing phosphorus into the thin film 3.