| 摘要 |
<p>PURPOSE:To suppress operational current consumption by making operation reading out storage information in plural memory cells arranged in an EPROM in a matrix state into the dynamic operation. CONSTITUTION:Switching MOS transistors T11-Tmn are provided on the source side of memory cells M11-Mmn, and are connected to VSS power source through the switching MOS transistors T11-Tmn. The switching MOS transistors T11-Tmn are controlled by word lines W1-Wm, and are constituted so that only the switching MOS transistor connected to the word line Wm selected optionally is turned ON, and the switching MOS transistors T11-T(m-1) connected to the word lines M1-W(m-1) not selected are turned OFF.</p> |
