| 摘要 |
PURPOSE:To eliminate interference between memory cells and to achieve high speed operation in a semiconductor memory having structure of a X type cell and a flat type cell. CONSTITUTION:Array structure in which connection of memory cells in the transverse direction is divided at a separating region is realized. And this separation is performed by injecting cores to memory cell transistors Mij and changing to transistors for separation Sij. Since connection of memory cells in the transverse direction is divided at the separating region, interference between cells can be eliminated, and high speed access can be performed without almost deterioration of integration. |
