| 发明名称 |
METHOD OF PRODUCING P-DOPED LAYERS, PARTICULARLY IN II-VI SEMICONDUCTORS |
| 摘要 |
Described is a method of producing p-doped layers, particularly in II-VI semiconductors, wherein the p-doped layer is produced in a CDV process using plasma activation of nitrogen-containing gases. |
| 申请公布号 |
WO9408355(A1) |
申请公布日期 |
1994.04.14 |
| 申请号 |
WO1993DE00915 |
申请日期 |
1993.09.28 |
| 申请人 |
AIXTRON GMBH |
发明人 |
HEIME, KLAUS;HEUKEN, MICHAEL |
| 分类号 |
H01L21/203;H01L21/363;H01L21/365;H01L33/28;H01S5/00;H01S5/30 |
主分类号 |
H01L21/203 |
| 代理机构 |
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代理人 |
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| 主权项 |
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