Non-volatile semiconductor memory having commonly used source or drain regions of floating gate type transistors

摘要

A non-volatile semiconductor memory is provided having a memory cell formed in a semiconductor substrate and arranged in rows and columns to form an X-character shape array. Each cell includes a control electrode and a first region and a second region having a conductivity-type different from that of the substrate. Alternate first and second column lines are provided wherein the first region and the second region of each cell in each column are coupled to the first column line and the second column line, respectively. The first column lines selectively function as ground lines for inputting data during a data writing mode. The first column lines function as bit lines, and the second column lines function as ground lines for outputting data during a data reading mode.