Device and method for depositing metal oxide films.

摘要

A method of forming a thin film of metal oxide compound on a substrate within an evacuated chamber, the method comprising the steps of: providing one or more first magnetrons (140) each having a metal sputtering material (4) on an outer surface thereof; positioning the substrate (S) opposite the one or more first magnetrons so that sputtered material from each magnetron is deposited on to the substrate; causing an inert gas to flow into the vacuum chamber and to exit (160) near the one or more first magnetrons; providing one or more second magnetrons (130,131) each comprising of a rotatable cylindrical magnetron having a metal sputtering material (130,131) on an outer surface thereof; causing oxygen gas to flow into the vacuum chamber and to exit (170,171) near the one or more second magnetrons wherein the flow rate of the oxygen is maintained at an effective rate to enable the one or more first magnetrons to sputter substantially in the metallic mode; applying potential to the one or more first magnetrons to cause sputtering; and applying potential to the one or more second magnetrons. <IMAGE>