| 摘要 |
<p>PURPOSE:To improve the reliability of a driving substrate for the active matrix- type light valve device formed by using an SOI substrate. CONSTITUTION:At least an integrated circuit is formed in a single crystal silicon layer 2 provided on an electrical insulator 1 in the semiconductor device. The integrated circuit is covered with a passivation film with a silicon oxynitride film or a silicon nitride film 3 as the uppermost layer. An adhesive layer 5 is formed on the passivation film, and the single crystal silicon layer 2 provided on the insulator 1 is adhered and fixed to a holding member 6 by the adhesive layer 5. The integrated circuit formed in the SOI substrate is transferred to the holding member 6 in this way, and a semiconductor device suitable to the driving substrate of a light valve device is obtained.</p> |
