| 发明名称 |
Planar fet-seed integrated circuits |
| 摘要 |
FETs and quantum well diodes are combined on the same semi-insulating substrate, while providing the FETs with protection from spurious voltages. A deeply buried P region in the semi-insulating substrate is partitioned by a high resistivity proton implanted region, to provide both the P region of the quantum well diode and an isolating buried P layer for the FETs.
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| 申请公布号 |
US5289015(A) |
申请公布日期 |
1994.02.22 |
| 申请号 |
US19910785670 |
申请日期 |
1991.10.31 |
| 申请人 |
AT&T BELL LABORATORIES |
发明人 |
CHIROVSKY, LEO M. F.;D'ASARO, LUCIAN A.;PEI, SHIN-SHEM;WOODWARD, TED K. |
| 分类号 |
H01L21/822;G02F3/02;H01L27/04;H01L27/095;H01L27/144;H01L27/15;H01L29/80;H01L29/86;H01L31/10;(IPC1-7):H01L27/14 |
主分类号 |
H01L21/822 |
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