MANUFACTURING MTHOD OF SEMICONDUCTOR DEVICE

摘要

The method includes a process for etch-backing a resist layer (5) coated on the upper part of multi layer resist pattern structure and removing the resist and a middle layer (1) simultaneously, and an ashing process or H2SO4 strip process for removing resist layers (2,5) remaining after removing the middle layer (1) with O2 plasma. The method has advantage of removing easily resist and middle layers by removing the resist and middle layers simultaneously by dry etch-back after thinly coating the resist layer with a polymer or a photoresist of low viscosity.