| 摘要 |
A quantum semiconductor device comprises a channel region formed with a two-dimensional carrier gas, a Schottky electrode structure provided on the channel region for creating a depletion region in the channel region to extend in a lateral direction such that the two-dimensional carrier gas is divided into a first region and a second region, a quantum point contact formed in the depletion region to connect the first and second regions of the two-dimensional carrier gas in a longitudinal direction, an emitter electrode provided on the channel region in correspondence to the first region of the two-dimensional carrier gas, one or more collector electrodes provided on the channel region in correspondence to the second region of the two-dimensional carrier gas, and another Schottky electrode structure provided in correspondence to the first region for creating a depletion region therein such that a path of the carriers entering into the quantum point contact is controlled asymmetrical with respect to a hypothetical longitudinal axis that passes through the quantum point contact in the longitudinal direction.
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