发明名称 High pressure liquid phase epitaxy reactor chamber and method with direct see through capability
摘要 An apparatus (10) and method are provided for directly viewing, through a viewport assembly (26), the process for forming a layer of mercury cadmium telluride of a predetermined composition on a surface of a wafer (not shown). According to the invention, a molten melt (20) comprising mercury, cadmium and tellurium is provided in a vertically oriented crystal growth chamber (14), which, in turn, is housed in a reactor tube (12). A wafer (not shown) is contacted with the crystal growth melt while cooling the melt below its liquidus temperature at a predetermined rate sufficient to cause a crystal growth layer of mercury cadmium telluride to form on the wafer (not shown). Viewports (26, 48) located approximately radially adjacent to the melt (22) provide direct see through capability to visually monitor the crystal growth process. The present invention is advantageous because the apparatus and method disclosed provide for ease of the growth set-up and operation, yielding mercury cadmium telluride layers of uniform composition and of high purity.
申请公布号 US5277746(A) 申请公布日期 1994.01.11
申请号 US19920920407 申请日期 1992.07.27
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 ANDERSON, JEFFREY M.
分类号 C30B19/06;C30B19/04;C30B19/10;C30B29/46;H01L21/208;(IPC1-7):C30B19/08 主分类号 C30B19/06
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