VERTICAL INSULATED-GATE FIELD-EFFECT TRANSISTOR,申请号JP19920147714-传众专利搜索

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发明名称	VERTICAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
摘要
申请公布号	JPH05343691(A)	申请公布日期	1993.12.24
申请号	JP19920147714	申请日期	1992.06.08
申请人	NIPPONDENSO CO LTD	发明人	KATO YUJI;HIMI KEIMEI
分类号	H01L21/336;H01L29/06;H01L29/08;H01L29/40;H01L29/423;H01L29/78;(IPC1-7):H01L29/784	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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