| 摘要 |
An integrated field-effect initiator useful for the pyrotechnic initiation or detonation of explosives includes a semiconductor channel of a first conductivity type bounded on opposite ends by semiconductor material of an opposite conductivity type to define two PN junctions (48, 50) in the conduction path. The semiconductor channel is doped to define a conduction path of sufficiently high impedance to prevent unintended initiation. A gate electrode (G) is positioned adjacent the channel and separated therefrom by an insulation layer to effect the conductivity of the channel as a function of a potential applied to the gate (G). In normal operation, an initiation electrical potential is applied to the gate (G) to effect field-enhanced conduction in the path sufficient to allow vaporization of the path to cause initiation of an explosive material in contact with the path. |
