| 摘要 |
The isolating device of a semiconductor device is isolated by implanting nitrogen as impurity into a semiconductor substrate, heat-treating the implanted impurity to form an impurity layer, selectively etching the substrate in the vertical direction with the impurity layer used as etch-stopper, coating a CVD oxide film on all the area of the substrate, etch-backing to reflow, grinding the surface. The vertical etching prevents production of any unnecessary area.
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