THIN FILM TRANSISTOR AND ITS PRODUCTION

摘要

PURPOSE:To produce a thin film transistor without causing damage such as pinholes to an insulating film at a part at which a source electrode and a gate electrode cross by etching a semiconductor layer and an impurity semiconductor layer while hiding a gate electrode circuit,, forming the source electrode and then removing the unnecessary parts of the semiconductor layer and the impurity semiconductor layer. CONSTITUTION:A gate electrode 2 is formed on a glass substrate 1 by patterning a film, and a gate insulating layer 3, a semiconductor layer 4 and a protective insulator layer 9 are formed on the substrate 1. The insulator layer 9 is patterned into a prescribed shape and an impurity semiconductor layer 6 is formed on the patterned layer 9. The impurity semiconductor layer 6 and the semiconductor layer 4 are simultaneously patterned and a transparent electrode 5 is formed by patterning a film. An electrode metal film is further formed and patterned to form a source electrode 7 and a drain electrode 8 and then the unnecessary parts of the impurity semiconductor layer 6 and the semiconductor layer 4 are removed by etching with the electrodes 7, 8 as a mask. The objective thin film transistor is produced.