CAPACITOR STRUCTURE OF SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THEREFOR

摘要

The capacitor structure of semiconductor memory device comprises a 1st storage electrode of a shape at an interval with an intermediate isolating layer formed on the lower part, a 2nd storage electrode covering the remaining part except the contact part of 1st storage electrode and the part of intermediate isolating layer, a dielectric film coating 1st and 2nd storage electrodes, a plate electrode completely covering the dielectric film. The capacitor has an available capacitor area at the upper and lower and side faces of storage electrodes.