| 摘要 |
PURPOSE:To manufacture a reverse type photoelectromotive device without damaging an amorphous semiconductor thin film by using energy beam such as laser beam which does not contain a wet process. CONSTITUTION:At first, a-Si semiconductor films 3a, 3b, 3c,... and second transparent electrode films 42a, 42b, 42c... superposed on a left end of first transparent electrode films 41a, 41b, 41c... are isolated by second higher harmonic of YAG laser. In the process, laser beam is projected from the side of a glass substrate 1. Thereby, each photoelectric conversion element is connected in series through the second transparent electrode films 42a, 42b, 42c.... Therefore, a reverse type integrated photoelectromotive device can be manufactured by using energy beam like a laser. Accordingly, fine processing properties can be improved and a manufacturing process can be simplified since a wet process is not used. Furthermore, since energy beam is projected from a substrate side, a lower layer is not damaged. |
