| 摘要 |
PURPOSE:To increase the capacitance of a capacitor by a method wherein an upper electrode of the capacitor is composed of upper and lower layers, a capacitor lower electrode is formed surrounding the above-mentioned lower layer, and the upper layer of a capacitor upper electrode is formed in such a manner that the upper surface and the side face of the capacitor lower electrode is covered. CONSTITUTION:A DRAM provided with a stacked type capacitor is composed of a field oxide film 2, source and drain regions 3a and 3b, a gate electrode 5, an interlayer insulating film 6, a capacitor lower electrode 7, a capacitor insulating film 8, a capacitor upper electrode 9, interlayer insulating films 10 and 12 and the like provided on a P-type silicon substrate 1. In this case, the capacitor upper electrode 9 is composed of upper and lower layers 9a and 9b, and the two layers are electrically connected in the central part. The electrode 9a of the lower layer is formed in such a manner that it is stretched along the main surface of the silicon substrate 1, the capacitor lower electrode 7 is formed surrounding the lower layer of electrode 9a, and the lower electrode 7 is composed of the upper and lower layers 7a and 7b. |
