| 摘要 |
PURPOSE:To obtain a connecting structure which mitigates displacement due to thermal expansion and which is low in continuity resistance by a method wherein a metal is formed in an arborescent form on at least one connecting electrode on the semiconductor element side and on the substrate side and a space between branches is filled with resin to form a bump. CONSTITUTION:An active surface of a semiconductor element 1 opposes to a connecting surface of a substrate 5 and connecting electrodes 2, 4 formed within the respective surfaces are directly connected through a bump 3. With such the mounting structure, a metal is formed in an arborescent form on at least one connecting electrode 2 on semiconductor element 1 side and on the substrate 5 side, and a space between branches 3a is filled with resin 3b to form a dendrite bump 3. It is favorable that a material which does not lose elasticity after hardening is used as the resin 3b. For instance, a conductive resin 6 is supplied to at least one of an electrode pad 4 or the bump 3 on the substrate, and the bump 3 comes into contact with the electrode pad 4 after positioning and is connected to the pad 4 by hardening the conductive resin 6. |
