| 摘要 |
PURPOSE:To obtain a thin-film transistor, of which numerical aperture can be increased without being influenced by light, by forming a semiconductor layer with specific carrier concentration into a translucent film. CONSTITUTION:A Cr film to be a gate electrode 2 is attached to and patterned on a substrate 1 by sputtering, a silicon nitride film as a gate insulating layer 3 is attached by a plasma CVD method, an oxygen content in the film is adjusted, and ITO film to be a semiconductor active layer 8 is attached by sputtering. Then, the silicon nitride film as a channel protective layer 5 is attached to and patterned on the semiconductor active layer 8 by the plasma CVD method, and the Cr film to be a source electrode 7 and drain electrode 6 is attached by sputtering and patterned by photolithographic. Therefore, the oxygen content in the ITO film is increased, a carrier concentration is controlled to 10<18>/cm<3> and less to lower electrical conductivity and the ITO film is used as the semiconductor active layer 8 so that element characteristics can be improved without influence of light. |
