| 摘要 |
<p>PURPOSE: To obtain a level shifter, switching a voltage higher than a feeding voltage and a lower voltage than a reference voltage by composing of a level shifter circuit with four field effect transistors having a prescribed connection. CONSTITUTION: The level shifter circuit, including a deep N-tank is formed on a P-type substrate connected to the reference voltage Vss. First to fourth FET transistors N1, N2, P1, P2 are provided with a first and a second N<+> doped zones and P<+> doped zones. And the first and second doped zones of P1 are connected to an output and negative voltage Vn, and P2 is feedback connected to P1. Also, the first and second doped zones are connected to the output and a more positive voltage Vp than the feeding voltage, a fifth doped zone of N1 is also connected to the voltage Vp, and N2 is feedback connected to N1.</p> |
