A METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR STRUCTURES

摘要

PCT No. PCT/GB86/00387 Sec. 371 Date Mar. 2, 1987 Sec. 102(e) Date Mar. 2, 1987 PCT Filed Jul. 3, 1986 PCT Pub. No. WO87/00348 PCT Pub. Date Jan. 15, 1987.A semiconductor structure and methods for making it, for use in opto-electronic devices, employs only MOVPE growth steps. The structure is based on a mesa having substantially non-reentrant sides. An initial semiconductor structure is produced which includes a substrate with a mesa having a self-aligned, central stripe of metal organic vapor phase growth suppressing material on its uppermost surface. Burying layers are then grown by MOVPE at either side of the mesa, the stripe removed, and covering layers grown over the mesa and adjoining regions of the burying layers. To make an opto-electronic device, a silica window can be formed on the uppermost surface of the covering layers and contacts provided through the window and to the remote face of the substrate. Two methods of making the initial semiconductor structure are described. Devices such as optical detectors and waveguides can be made using methods according to the invention. Particularly importantly, semiconductor lasers which will operate in a single transverse mode can be made.