CAPACITOR CELL HAVING A GRANULATED LAYER AND MANUFACTURING METHOD THEREOF

摘要

The method for granulating the silicon layer to maximise its surface comprises steps: (a) forming 1st insulation and silicon layers on a substrate; (b) forming a 2nd insulation layer on the 1st silicon layer with width of pin hole to be formed; (c) forming a 2nd silicon layer on the 2nd insulation layer with certain width to form a number of pin holes and residual layer of the 2nd insulation layer under the 2nd silicon layer; (d) etching the 2nd silicon layer with speed which is faster than the residual one of the 2nd insulation layer, then forming a number of pin holes in the 1st silicon layer. Therefore, the surface of the 1st silicon layer is granulated.