| 摘要 |
PURPOSE:To eliminate a poor influence due to contamination of a semiconductor substrate and thermal damage at a high temperature and provide a method for manufacturing an internal current constriction LED which can reduce manufacturing cost by forming the internal current constriction LED with one epitaxial growth. CONSTITUTION:After a protrusion part 9 is formed on a P-type semiconductor substrate 7, an N-type semiconductor layer 6 is formed on the P-type semiconductor substrate 7 so that the thickness of the upper-side part becomes thinner than that of other parts and at the same time a P-type semiconductor layer 5 is formed on the N-type semiconductor layer 6. Then, the N-type semiconductor layer 6 at the upper side of the protrusion part 9 is inverted to P type by diffusion of impurities from the P-type semiconductor substrate 7 or the P-type semiconductor layer 6, thus forming a current-passage part consisting of the inverted part and the protrusion part 9. |
