SEMICONDUCTOR SUBSTRATE HAVING THE STRUCTURE ASSEMBLY VARIED AND METHOD OF THE SAME

摘要

The method comprises (a) forming a 1st insulation film (27) on the seed wafer (21), (b) forming a 2nd insulation film (29) on (27) and defining substrate contact (28), (c) depositing a 1st polycrystalline silicon (30) on (28), (d) forming fine pattern on (30) to define electric structural body (31), (e) growing or depositing insulation film (32) for (31), (f) depositing a 2nd polycrystalline silicon layer (33) and grinding (33) into mirror plane to remove surface unevenness, (g) forming insulation film (35) on handle wafer (36) and joining the mirror plane (34b) with the film (35), and (h) grinding the wafer (21) into thin film until the film (27) appears from the rear side (21a) of (21).