| 摘要 |
A gate turn-off thyristor which comprises a semiconductor body having at least four contiguous layers, namely, a first layer of a first conductivity type, a second layer lying continguous to the first layer and having a second conductivity type, a third layer lying contiguous to the second layer and having said first conductivity type, and a fourth layer contiguous to the third layer and having said conductivity type; an anode electrode mounted on said first layer; a gate electrode formed on said third layer; and a cathode electrode deposited on said fourth layer, and in which the following two relations are satisfied: rho xVj/ rho sb>/= 10.5(vxcm) and rho sb </= 35 ( OMEGA / ) where rho sb = sheet resistance ( OMEGA / ) at the normal temperature of the third layer, Vj = backward withstanding voltage (V) at a PN junction bertween the third and fourth layers, and rho = specific resistance ( OMEGA xcm) of the second layer.
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