发明名称 |
PRODUCTION OF POLYSILANE ORIENTED FILM |
摘要 |
PURPOSE:To produce a polysilane film excellent in the orientation of molecules and nearly free from orientation defects by orienting a polysilane film formed on a substrate by vacuum deposition. CONSTITUTION:The surface of a silicon wafer is rubbed with cotton in one direction to improve the adhesion of a film. Polysilane synthesized by an electrode reaction with phenylmethylsilane as starting material is vacuum-deposited at 100-250 deg.C deposition temp. under 10<-4>-10<-5> Torr pressure to form a thin polysilane film of 300Angstrom thickness. The resulting polysilane oriented film enhances the mobility of carriers and attains reduced bright resistance. |
申请公布号 |
JPH05171416(A) |
申请公布日期 |
1993.07.09 |
申请号 |
JP19910343066 |
申请日期 |
1991.12.25 |
申请人 |
OSAKA GAS CO LTD |
发明人 |
NISHIDA RYOICHI;KAWASAKI SHINICHI;MURASE HIROAKI;SHIYUU TOKUGEN;TOKI MOTOYUKI;YAMADA YOSHIYUKI;ONAKA TADAO |
分类号 |
C23C14/12;C08J7/04;C08L83/00;C25B3/04 |
主分类号 |
C23C14/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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