发明名称 PRODUCTION OF POLYSILANE ORIENTED FILM
摘要 PURPOSE:To produce a polysilane film excellent in the orientation of molecules and nearly free from orientation defects by orienting a polysilane film formed on a substrate by vacuum deposition. CONSTITUTION:The surface of a silicon wafer is rubbed with cotton in one direction to improve the adhesion of a film. Polysilane synthesized by an electrode reaction with phenylmethylsilane as starting material is vacuum-deposited at 100-250 deg.C deposition temp. under 10<-4>-10<-5> Torr pressure to form a thin polysilane film of 300Angstrom thickness. The resulting polysilane oriented film enhances the mobility of carriers and attains reduced bright resistance.
申请公布号 JPH05171416(A) 申请公布日期 1993.07.09
申请号 JP19910343066 申请日期 1991.12.25
申请人 OSAKA GAS CO LTD 发明人 NISHIDA RYOICHI;KAWASAKI SHINICHI;MURASE HIROAKI;SHIYUU TOKUGEN;TOKI MOTOYUKI;YAMADA YOSHIYUKI;ONAKA TADAO
分类号 C23C14/12;C08J7/04;C08L83/00;C25B3/04 主分类号 C23C14/12
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