| 摘要 |
PURPOSE:To form a fine resist pattern on a substrate by applying a resist film of novolak resin/naphthoquinonediazo compound. CONSTITUTION:A positive photoresist film 2 of novolak resin naphthoquinonediazo is formed on a silicon substrate 1. Then, using a mask plate 3, the film 2 is exposed to light 4 by an i-beam stepper. By developing the film 2 with an alkali developer, a spare resist pattern 2a is formed and at the same time, a coupling layer 2b is formed on the surface of the spare resist pattern 2a. In the first stage of development, only an upper part of the coupling layer dissolves and then an inner part of the resist film is dissolves. After development for a specified period of time, only a side part of the coupling layer is left over and a resist pattern of line width 0.20mum is formed. By this method, a fine resist pattern can be formed. |
