发明名称 Method of growing single crystals of alpha aluminum phosphate
摘要 Single crystals of alpha aluminum phosphate of high crystal perfection are grown from seeded solutions of aluminum orthophosphate and orthophosphoric acid in such a manner as to provide direct visual observation of the crystal growth process and allow precise determination of nucleation and growth kinetics. The method involves sealing the seeded solution in clear quartz ampules, inserting the ampules into a precisely temperature controlled silicone oil bath, increasing the temperature of the silicone oil bath from ambient temperature to approximately 150 degrees C. over a three hour period, programming the temperature of the bath upward at the rate of 0.1 to 2.0 degrees C. per day for periods up to sixty days, and removing the quartz ampules from the silicone oil bath and quickly cooling and removing the crystals.
申请公布号 US4247358(A) 申请公布日期 1981.01.27
申请号 US19790046961 申请日期 1979.06.08
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY 发明人 AUCOIN, THOMAS R.;SCHWARTZ, ABRAHAM;WADE, MELVIN J.;MALIK, ROGER J.
分类号 C30B7/00;(IPC1-7):C30B7/10 主分类号 C30B7/00
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