| 摘要 |
PURPOSE:To increase power of a high frequency semiconductor element without increasing a chip size by forming an active region, a base connecting electrode and an emitter connecting electrode at the absolute line at both sides of the diagonal line of a substrate when forming the first and second transistors on a rectangular or square semiconductor substrate, and connecting the electrodes to the bonding regions of the base and the emitter disposed on the diagonal line. CONSTITUTION:When the first and second transistor active regions 121, 122 are formed on a semiconductor substrate 11, the regions are formed linearly symmetrically at both sides of the diagonal line AA' of the substrate 11. Similarly, the base connecting electrodes 151, 152 and emitter connecting electrodes 161, 162 are formed linearly symmetrically. A base bonding region 13 and an emitter bonding region 14 are disposed on the diagonal line AA', and the electrodes 151, 152 and 161, 162 are connected. Thus, the power can be increased without increasing the chip size, thermal runaway decreases, and high frequency characteristic is improved. |
