发明名称 X-ray exposure apparatus and semiconductor-device manufacturing method.
摘要 <p>X-rays enter an airtight chamber (4) through a beam duct (15), pass through a transmission window (5), and expose a wafer (1) and mask (3) disposed outside the airtight chamber. The wafer and mask are held by a wafer chuck (2a) and a mask holder (6), respectively. The mask holder includes a pressure sensor (7), which detects variations in the atmospheric pressure. An output from the pressure sensor is converted into a change in the intensity of the x-rays by an arithmetic unit (17), and is transmitted to a control unit (19), which controls a driving unit (18) of a shutter (8). By thus controlling the moving speed of the shutter in accordance with variations in the atmospheric pressure, it is possible to prevent variations in the amount of x-ray exposure of the wafer. &lt;IMAGE&gt;</p>
申请公布号 EP0540302(A1) 申请公布日期 1993.05.05
申请号 EP19920309856 申请日期 1992.10.28
申请人 CANON KABUSHIKI KAISHA 发明人 EBINUMA, RYUICHI
分类号 G21K5/04;G03F7/20;H01L21/027 主分类号 G21K5/04
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