| 摘要 |
PURPOSE:To reduce or eliminate contact holes and to improve an integration by electrically connecting a diffused wiring region to an element on an epitaxial layer by an inner contact of a longitudinally extended impurity diffused region. CONSTITUTION:First, a diffused wiring region 12 for a bit line, a diffused wiring region 13 for a source line and a P-type epitaxial layer 14 are formed on a P-type semiconductor substrate 11. Then, a drain region 8 is isolated on the layer 14 on the region 13, and an element isolating region 5 is so formed as to obtain a source region 9. Thereafter, a first gate insulating film 16 is formed on the layer 14, and a channel region 15 is formed between the regions 8 and 9. Subsequently, an impurities such as phosphorus are implanted in parts for connecting the regions 8, 12 to the regions 9, 13, and annealed to form longitudinally extended first and second inner contacts 10a, 10b (not shown). |
