VERFAHREN ZUR SELBSTJUSTIERTEN HERSTELLUNG VON KONTAKTEN ZWISCHEN IN UEBEREINANDER ANGEORDNETEN VERDRAHTUNGSEBENEN EINER INTEGRIERTEN SCHALTUNG ENTHALTENEN LEITERBAHNEN.

摘要

The contact formulation is obtained using a pillar technique, with a conductor layer (4) for the conductor path in the lower IC plane and at least 2 further conductor layers (5,6) for providing the contact. The length of the contact is defined by a mask ((1) in dependance on the correct width of the conductor path in the lower IC plane and its width is limited by the mask used for the latter conductor path. The contact used the conductor path are obtained by selective etching of the layer strcuture. Pref. the first conductive layer (4) is applied to an innulation layer (2) covering the surface of an active substrate (1) via an intermediate barrier layer (3).