| 摘要 |
PURPOSE:To increase the depth of exposure focus on a wafer in a photolithography process for a semiconductor device. CONSTITUTION:The photomask is so constituted that focusing on the upper and lower part of the high step of the wafer can be obtained by relatively shifting light shielding opaque patterns 12 and 15 of the photomask on an optical axis. Consequently, the simultaneous focusing on the upper and lower parts of the step on the substrate which has the relatively high step is enabled and pattern transfer can excellently be performed. |
