Magnetic thin film for magnetostatic-wave devices.

摘要

A ferrimagnetic garnet film for magnetostatic wave devices comprises an yttrium-iron-garnet and contains at least one element selected from the group consisting of Bi, Gd, Lu, Sc, La, Ga and Al. The film is epitaxially grown on a nonmagnetic substrate consisting essentially of an unmodified or modified gadolinium-gallium-garnet so that the difference in lattice constant between said film and substrate is not more than 0.001 ANGSTROM .