| 摘要 |
PURPOSE:To enable formation of a device of three dimensional IC structure by forming a through-hole in an etching stop layer and a device operational layer of a mounting substrate corresponding to a specified electrode position of a base substrate and by burying a contact metal. CONSTITUTION:A base substrate and a mounting substrate 10 are prepared separately and an etching stop layer 12 is formed by performing rear etching for the mounting substrate 10 making a peripheral part thereof remain. The mounting substrate 10 can be thereby mounted on an upper side of a base substrate using a substrate 11 remaining in a peripheral part as a frame body. In the process, a through-hole 18 is formed and a contact metal 19 is buried; thereby, an electrode 14 which is also resistant to wire bonding is formed. A device of three dimensional IC structure wherein a high speed and high function device and a high integration device are made integral is formed in this way. |
