| 摘要 |
PURPOSE:To provide a semiconductor device and its manufacturing method which enables a storage capacity to be greatly increased by solving a problem of alpha rays software error and information reading using a sense amplifier for the semiconductor memory device, especially a large-scale semiconductor memory device such as a DRAM exceeding 256 Mbits and its manufacturing method. CONSTITUTION:A title item is constituted so that total number of memory cells which are connected to a sense amplifier is below a specified number for preventing a capacity of the bit wire for the capacity of the memory cell from exceeding the capacity for reading out information by the sense amplifier. |
