| 摘要 |
PURPOSE:To effectively suppress laser oscillation by having double heterojunction consisting of an active layer having a specific thickness and a clad layer, which is a light confinement layer while having lamination structure of an edge luminous type light emitting diode. CONSTITUTION:An entitled light emitting diode is composed of double heterolamination structure where an n-type buffer layer 11 is made to crystal grow on an n-type GaAs substrate 1 while having a plurality of layers of an n-type Al0.6Ga0.4As clad layer 12 of an energy gas 2.03eV, an AlI0.2Ga0.8 active layer 13 of an energy gap 1.67eV, a p-type Al0.6Ga0.4As clad layer 14 and a p-type GaAs cap layer 15 of an energy gap of 2.03eV. Then, a thickness of the active layer is made to be 0.01mum to 0.1mum, more desirably 0.01 to 0.5mum. Thereby, laser oscillation can be effectively suppressed. |
