| 摘要 |
PURPOSE:To form an a-Si film excellent in photoelectric characteristics and transistor characteristics in safety and at a low cost, by a method wherein, after disilane is made to flow in a flow reaction vessel and heated, said disilane is introduced into a film forming vessel and subjected to heat assisted CVD. CONSTITUTION:The inside of a flow reaction vessel 1 and a substrate 3 are set at a temperature in the range of 270-430 deg.C. When disilane and dilute gas are used, gas in which the dilute gas of specified flow rate is mixed is made to flow into the flow reaction vessel 1. Then said gas is introduced into a film forming vessel 2 and subjected to heat assisted CVD at a comparatively low temperature of 350-430 deg.C. Thereby an a-Si film is deposited on a substrate 4. Driving excellent in safety and operability is enabled, and a film forming speed capable of practical use can be obtained at a comparatively low temperature. Further, since the cost of disilane is rather low, the a-Si film can be formed at a low material cost. |
